FamilyPackageCircuitVBRDSS (V)RDS(on) Max 4.5V (mOhms)RDS(on) Max 10V (mOhms)ID @ TC = 25C (A)ID @ TA = 25C (A)ID @ TA = 70C (A)Qg Typ (nC)Rth(JC) (K/W)Power Dissipation @ TA = 25C (W)Schottky VF (V)@ IFPbFPackage Class Can1K Budgetary Pricing (USD)HEXFET Power MOSFETs Discrete N-ChannelI-PakDiscrete55RDS(on) Max 2.7V (mOhms)210.0140.010ID @ TC = 100C (A) 5.3Qgd Typ (nC)5.3 Part StatusPbF Option AvailableThru-Hole0.245
IRLU014N |
RFQ for IRLU014N |
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| Technical/Catalog Information | IRLU014NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 265pF @ 25V |
| Power - Max | 28W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 7.9nC @ 5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLU014NPBF IRLU014NPBF |
| Product | Manufacturers | Pack | D/C | |||||||||||||||||
| IRLU014N | - | I-pak | 07+ |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 10 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 7.1 | |
| IDM | Pulsed Drain Current | 40 | |
| PD @TC = 25°C | C Power Dissipation | 28 | W |
| Linear Derating Factor | 0.2 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 35 | mJ |
| IAR | Avalanche Current | 6.0 | A |
| EAR | Repetitive Avalanche Energy | 2.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
| Models | MFG | Pack |
| IRL1004 | TO-220 | |
| IRL1004L | TO-262 | |
| IRL1004S | 2004+ | |
| IRL1104 | TO-220AB | |
| IRL1104L | TO-262 | |
| IRL1104LPBF | ||
| IRL3705L | ||
| IRL3705N | 2004+ | |
| IRL3705NL | TO-262 | |
| IRL3705NPBF | ||
| IRL1104S | TO-263 | |
| IRL1404 | ||
| IRL1404L | TO-262 | |
| IRL1404PBF | ||
| IRL1404S | D2-Pak | |
| IRL1404ZL | ||
| IRL1404ZS | ||
| IRL1405L | ||
| IRL1530G | ||
| IRL1540 G | ||
| IRL214 | ||
| IRL2203 | ||
| IRL2203L | ||
| IRL2203N | TO-3P | |
| IRL2203NL | TO-262 | |
| IRL2203NPBF | ||
| IRL3303S | TO-263 | |
| IRL3303STRL | ||
| IRL3303STRR | ||
| IRL3402 | TO-220 | |
| IRLSL4030PBF | ||
| IRLSL3036PBF | ||
| IRLSL3034PBF | ||
| IRLS640A | ||
| IRLS630A | ||
| IRLS620A | ||
| IRLS610A | ||
| IRLS540A | ||
| IRLS530A | ||
| IRLS520A | ||
| IRLS510A | ||
| IRLS4030TRLPBF | ||
| IRLS4030TRL7PP | ||
| IRLS4030PBF | ||
| IRLS4030-7PPBF | ||
| IRLS3036TRLPBF | ||
| IRLS3036TRL7PP | ||
| IRLS3036PBF | ||
| IRLS3036-7PPBF | ||
| IRLS3036-7P |